TOMSK, Apr 28 – RIA Tomsk. The joint scientific and educational center of Tomsk State University (TSU) and "Micran" scientific and production firm has opened on Thursday, it will be engaged in development of new materials and technologies for the space industry, including the creation of element base, the correspondent of RIA Tomsk from the scene.
Earlier it was reported that it is the second joint center of "Micran" and TSU. On its base students, scientists and the staff of the enterprise will be engaged in common educational, scientific and innovative activity, including development of materials and technologies for space application.
"There are two main prerequisites which have roused us to this joint decision. <…> The first is – those calls which face the Russian economy, the company on production of new materials which have to be used in space, and it is impossible without attraction of competences of university. The second is – training for dynamically developing company", – the rector of TSU Eduard Galazhinsky told at the opening of the center.
He has noted that "Micran" requires knowledge of TSU scientists in the field of chemistry, materials science, mathematical modeling and many others for production development. The company, in turn, will help to bring developments of TSU to the market. In creation of the center the university and the enterprise invested in the sum of 100 million rubles.
The head of "Micran" Vladimir Dotsenko confirmed Galazhinsky's words: the enterprise hopes that as a result of cooperation it will receive not only new innovative production, but also young high quality specialists who will gain practical knowledge within work of the center. The new division is equipped with the latest equipment – and not only scientific, but industrial.The head of the center Grigory Dunayevsky has specified that in plans of team of the center there are already several projects. In particular – it is development of new element base for spacecrafts. Now "Micran" has experience of production of microwave element base on the basis of gallium arsenide. In TSU is conducted gallium nitride researches that will allow to create in the center a board of new type, uniting electric and optical properties.